Electronic Devices (NEET Physics): Questions 38  43 of 67
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Question number: 38
» Electronic Devices » Logic Gates (Or, and, NOT, NAND and NOR)
Question
What will be the input of A and B for the Boolean expression
Choices
Choice (4)  Response  

a.  0, 0 

b.  1, 0 

c.  1, 1 

d.  0, 1 

Passage
Doping changes the Fermi energy of a semiconductor. Consider silicon, with a gap of 1.11 eV between the top of the valence bond and the bottom of the conduction band. At 300K the Fermi level of the pure material is nearly at the midpoint of the gap. Suppose that silicon is doped with donor atoms, each of which has a state 0.15 eV below the bottom of the silicon conduction band, and suppose further that doping raises the Fermi level to 0.11 eV below the bottom of that band.
Question number: 39 (1 of 3 Based on Passage) Show Passage
» Electronic Devices » Semiconductors
Question
Calculate the probability that a donor state in the doped material is occupied?
Choices
Choice (4)  Response  

a.  0.008 

b.  0.824 

c.  8.2 

d.  0.08 

Question number: 40 (2 of 3 Based on Passage) Show Passage
» Electronic Devices » Semiconductors
Question
For doped silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied? (e ^{4.254} = 70.38)
Choices
Choice (4)  Response  

a.  10.5 ⨯ 10 ^{2 } 

b.  1.40 ⨯ 10 ^{2} 

c.  14 ⨯ 10 ^{2} 

d.  5.20 ⨯ 10 ^{2} 

Question number: 41 (3 of 3 Based on Passage) Show Passage
» Electronic Devices » Semiconductors
Question
For pure silicon, calculate the probability that a state at the bottom of the silicon conduction band is occupied? (e ^{21.46} = 20.89 ⨯ 10 ^{8})
Choices
Choice (4)  Response  

a.  4 ⨯ 10 ^{10} 

b.  4.79 ⨯ 10 ^{10 } 

c.  5.20 ⨯ 10 ^{12} 

d.  3.42 ⨯ 10 ^{11} 

Question number: 42
» Electronic Devices » Logic Gates (Or, and, NOT, NAND and NOR)
Question
P  Q  X 
0  0  0 
0  1  0 
1  0  0 
1  1  1 
Choices
Choice (4)  Response  

a.  NOR 

b.  OR 

c.  AND 

d.  NAND 

Question number: 43
» Electronic Devices » Junction Transistor
Question
Which of the following are false?
(1) Common base transistor is commonly used because current gain is maximum
(2) Common collector is commonly used because current gain is maximum
(3) Common emitter is the least used transistor
(4) Common emitter is commonly used because current gain is maximum
Select the correct answers and mark it according to the following codes.
Choices
Choice (4)  Response  

a.  2 and 4 are correct 

b.  1 and 3 are correct 

c.  1, 2 and 3 are correct 

d.  1 and 2 are correct 
