Electronics-Semiconductor Devices [GATE (Graduate Aptitude Test in Engineering) Physics]: Questions 1 - 4 of 9

Access detailed explanations (illustrated with images and videos) to 659 questions. Access all new questions- tracking exam pattern and syllabus. View the complete topic-wise distribution of questions. 3 Year Validity- Access Unlimited Times on Unlimited Devices.

View Sample Explanation or View Features.

Rs. 450.00 -OR-

How to register? Already Subscribed?

Question 1

Appeared in Year: 2015

Write in Short Short Answer▾

The bad gap of an intrinsic semiconductor is and . At 300 K, the Fermi level with respected to the edge of the valence band (in eV) is at ________ (up to three decimal places)

Edit

Question 2

Appeared in Year: 2015

Question MCQ▾

In a Hall Effect experiment, the Hall voltage for an intrinsic semiconductor is negative. This is because – (Symbols carry usual meaning)

Choices

Choice (4)Response

a.

b.

c.

d.

Edit

Question 3

Appeared in Year: 2012

Question MCQ▾

Identify the CORRECT energy band diagram for Silicon doped with Arsenic. Here and are conduction band, valence band, impurity level and Fermi level, respectively.

Choices

Choice (4)Response

a.

Conduction, Valence Bands and Impurity, Fermi Levels (Choice A)

b.

Conduction, Valence Bands and Impurity, Fermi Levels (Choice B)

c.

Conduction, Valence Bands and Impurity, Fermi Levels (Choice C)

d.

Conduction, Valence Bands and Impurity, Fermi Levels (Choice D)

Edit

Question 4

Appeared in Year: 2012

Question MCQ▾

A Ge semiconductor is doped with acceptor impurity concentration of . For the given hole mobility of the resistivity of this material is –

Choices

Choice (4)Response

a.

b.

c.

d.

Edit