Electronics-Semiconductor Devices (GATE (Graduate Aptitude Test in Engineering) Physics): Questions 1 - 3 of 9

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Question number: 1

» Electronics » Semiconductor Devices

Appeared in Year: 2015

Short Answer Question▾

Write in Short

The bad gap of an intrinsic semiconductor is Equation and Equation . At 300 K, the Fermi level with respected to the edge of the valence band (in eV) is at ________ (up to three decimal places)

Equation

Question number: 2

» Electronics » Semiconductor Devices

Appeared in Year: 2015

MCQ▾

Question

In a Hall Effect experiment, the Hall voltage for an intrinsic semiconductor is negative. This is because – (Symbols carry usual meaning)

Choices

Choice (4) Response

a.

Equation

b.

Equation

c.

Equation

d.

Equation

Question number: 3

» Electronics » Semiconductor Devices

Appeared in Year: 2012

MCQ▾

Question

Identify the CORRECT energy band diagram for Silicon doped with Arsenic. Here Equation and Equation are conduction band, valence band, impurity level and Fermi level, respectively.

Choices

Choice (4) Response

a.

Quadrilateral poly1 Quadrilateral poly1: Polygon A, B, C, DQuadrilateral poly1 Quadrilateral poly1: Polygon A, B, C, DQuadrilateral poly1_1 Quadrilateral poly1_1: Polygon A_1, B_1, C_1, D_1Quadrilateral poly1_1 Quadrilateral poly1_1: Polygon A_1, B_1, C_1, D_1Segment c Segment c: Segment [C, D] of Quadrilateral poly1Segment a_1 Segment a_1: Segment [A_1, B_1] of Quadrilateral poly1_1Segment f Segment f: Segment [A, D_1] Segment g Segment g: Segment [E, F] Segment h Segment h: Segment [G, H] CB text1 = “CB”E_ {D} text1_1 = “E_ {D} “E_ {D} text1_1 = “E_ {D} “E_ {F} text1_2 = “E_ {F} “E_ {F} text1_2 = “E_ {F} “VB text1_3 = “VB”

Conduction, Valence Bands and Impurity, Fermi Levels (Choice A)

In figure conduction band, valence band, impurity level and Fermi level for silicon doped with Arsenic are shown.

b.

Quadrilateral poly1 Quadrilateral poly1: Polygon A, B, C, DQuadrilateral poly1 Quadrilateral poly1: Polygon A, B, C, DQuadrilateral poly1_1 Quadrilateral poly1_1: Polygon A_1, B_1, C_1, D_1Quadrilateral poly1_1 Quadrilateral poly1_1: Polygon A_1, B_1, C_1, D_1Segment c Segment c: Segment [C, D] of Quadrilateral poly1Segment a_1 Segment a_1: Segment [A_1, B_1] of Quadrilateral poly1_1Segment f Segment f: Segment [A, D_1] Segment g Segment g: Segment [E, F] Segment h Segment h: Segment [G, H] CB text1 = “CB”E_ {D} text1_1 = “E_ {D} “E_ {D} text1_1 = “E_ {D} “E_ {F} text1_2 = “E_ {F} “E_ {F} text1_2 = “E_ {F} “VB text1_3 = “VB”

Conduction, Valence Bands and Impurity, Fermi Levels (Choice B)

In figure conduction band, valence band, impurity level and Fermi level for silicon doped with Arsenic are shown.

c.

Quadrilateral poly1 Quadrilateral poly1: Polygon A, B, C, DQuadrilateral poly1 Quadrilateral poly1: Polygon A, B, C, DQuadrilateral poly1_1 Quadrilateral poly1_1: Polygon A_1, B_1, C_1, D_1Quadrilateral poly1_1 Quadrilateral poly1_1: Polygon A_1, B_1, C_1, D_1Segment c Segment c: Segment [C, D] of Quadrilateral poly1Segment a_1 Segment a_1: Segment [A_1, B_1] of Quadrilateral poly1_1Segment f Segment f: Segment [A, D_1] Segment g Segment g: Segment [E, F] Segment h Segment h: Segment [G, H] CB text1 = “CB”E_ {D} text1_1 = “E_ {D} “E_ {D} text1_1 = “E_ {D} “E_ {F} text1_2 = “E_ {F} “E_ {F} text1_2 = “E_ {F} “VB text1_3 = “VB”

Conduction, Valence Bands and Impurity, Fermi Levels (Choice C)

In figure conduction band, valence band, impurity level and Fermi level for silicon doped with Arsenic are shown.

d.

Quadrilateral poly1 Quadrilateral poly1: Polygon A, B, C, DQuadrilateral poly1 Quadrilateral poly1: Polygon A, B, C, DQuadrilateral poly1_1 Quadrilateral poly1_1: Polygon A_1, B_1, C_1, D_1Quadrilateral poly1_1 Quadrilateral poly1_1: Polygon A_1, B_1, C_1, D_1Segment c Segment c: Segment [C, D] of Quadrilateral poly1Segment a_1 Segment a_1: Segment [A_1, B_1] of Quadrilateral poly1_1Segment f Segment f: Segment [A, D_1] Segment g Segment g: Segment [E, F] Segment h Segment h: Segment [G, H] CB text1 = “CB”E_ {D} text1_1 = “E_ {D} “E_ {D} text1_1 = “E_ {D} “E_ {F} text1_2 = “E_ {F} “E_ {F} text1_2 = “E_ {F} “VB text1_3 = “VB”

Conduction, Valence Bands and Impurity, Fermi Levels (Choice D)

In figure conduction band, valence band, impurity level and Fermi level for silicon doped with Arsenic are shown.

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