Electronics [GATE (Graduate Aptitude Test in Engineering) Physics]: Questions 25 - 29 of 70

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Question 25

Appeared in Year: 2011

Question

MCQ▾

For an intrinsic semiconductor, are respectively the effective masses of electrons and holes near the corresponding band edges. At a finite temperature, the position of the Fermi level –

Choices

Choice (4)Response

a.

Depends on but not on

b.

Depends on but not on

c.

Depends neither on nor on

d.

Depends on both and

Question 26

Appeared in Year: 2013

Write in Short

Short Answer▾

An channel junction field effect transistor has source to drain current at shorted gate and pinch off voltage . Calculate the drain current in for a gate – source voltage of . The answer should be up to two decimal places.

Question 27

Appeared in Year: 2011

Question

MCQ▾

In the following circuit, and are identical transistors having . The current passing through the transistor is –

A Circuit Diagram Consists of Two Transistors

Choices

Choice (4)Response

a.

b.

c.

d.

Question 28

Appeared in Year: 2011

Question

MCQ▾

The following Boolean expression

can be simplified to –

Choices

Choice (4)Response

a.

b.

c.

d.

Question 29

Appeared in Year: 2011

Question

MCQ▾

Consider the following circuit,

Circuit of an Op – Amp and Two Resistors

Which of the following correctly represents the output corresponding to the input ?

Choices

Choice (4)Response

a.

O/P and I/P Signals for Given Circuit: Choice A

b.

O/P and I/P Signals for Given Circuit: Choice B

c.

O/P and I/P Signals for Given Circuit: Choice C

d.

O/P and I/P Signals for Given Circuit: Choice D

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