Electronic Devices-Energy Bands in Intrinsic and Extrinsic Silicon [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 1 - 5 of 149

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Question 1

Appeared in Year: 2017

Question MCQ▾

The depletion region in a junction diode contains charges that are: (November paper 2)

Choices

Choice (4)Response

a.

Mostly minority carriers

b.

Fixed donor and acceptor ion

c.

Mobile donor and acceptor ion

d.

Mostly majority carriers

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Question 2

Appeared in Year: 2017

Question MCQ▾

The operation of JFET involves mainly:

(1) Flow of Minority carriers

(2) Flow of Majority carriers

(3) A very high input impedance

(4) Negative resistance

Which of the following is correct? (November paper 2)

Choices

Choice (4)Response

a.

(3) and (1)

b.

(3) and (4)

c.

(2) and (3)

d.

(1) and (2)

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Question 3

Appeared in Year: 2018

Question MCQ▾

In a JFET, the maximum value of Trans conductance is: (July)

Choices

Choice (4)Response

a.

b.

c.

d.

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Question 4

Appeared in Year: 2018

Question MCQ▾

In an abrupt p-n junction if , then the barrier potential is: (July)

1)

2)

3)

4)

Choices

Choice (4)Response

a.

1) is correct but 3) is wrong

b.

2) is correct but 4) is wrong

c.

3) is correct but 1) is wrong

d.

4) is correct but 2) is wrong

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Question 5

Appeared in Year: 2018

Question MCQ▾

In an intrinsic semiconductor, the intrinsic carrier density is: (July)

Choices

Choice (4)Response

a.

b.

c.

d.

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