Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 157 - 160 of 161

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Question 157

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2020

Question

Numeric Answer▾

The transfer function of a stable discrete time LTI system is , where K and real no. The value of with , for which magnitude rest one of the systems to constant over all frequency.

Question 158

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2020

Question

MCQ▾

An enhancement MOSFET of threshold voltage 3 V is being used in the sample and hold circuit given below. Assume that the substrate of MOS device is connected to -10 V. If the input voltage V1 lies between 10 V, the minimum and the maximum values of required of proper sampling and holding respectively, are

An Enhancement MOSFET of Threshold Voltage

Choices

Choice (4)Response

a.

10 V and – 13 V.

b.

10 V and – 10 V.

c.

3 V and – 3 V.

d.

13 V and – 7 V.

Question 159

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2020

Question

MCQ▾

Using the incremental low frequency small-signal model of the MOS device, the Norton equivalent resistance of the following circuit is

Incremental Low Frequency Small-Signal Model

Choices

Choice (4)Response

a.

b.

c.

d.

Question 160

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2021

Question

MCQ▾

The energy band diagram of a p-type semiconductor bar of length L under equilibrium condition (i.e.. , the Fermi energy level is constant) is shown in the figure. The valance band is sloped since doping is non-uniform along the bar. The difference between the energy levels of the valence at the two edges of the bar is .

The Energy Band

If the changes of an electron is q, then the magnitude of the electric filed developed inside this semiconductor bar is

Choices

Choice (4)Response

a.

b.

c.

d.

Developed by: