Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 154 - 156 of 161

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Question 154

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2020

Question

MCQ▾

A single crystal intrinsic semiconductor is at temp of 300 K with effective density of states for holes twice that of electrons. . The intrinsic Fermi level is shifted from mid-bond gap energy level by

Choices

Choice (4)Response

a.

26.90 meV

b.

18.02 meV

c.

9.01 meV

d.

13.45 mev

Question 155

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2021

Question

Numeric Answer▾

A silicon P-N junction is shown in the figure. The doping in the P region is and doping in the N region is . The parameters given are

Built-in voltage

Electron charge (q)

Vacuum permittivity F/m

Relative permittivity of silicon

A Silicon P-N Junction

The magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is ________ V.

Question 156

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2020

Question

MCQ▾

A one-sided abrupt pn junction diode has a depletion capacitance of 50 PF at reverse bias of 0.2 V. The plot of versus the applied voltage V for this diode is a straight line as shown in the below. The slope of the plot is ________

A One-Sided Abrupt Pn Junction Diode

Choices

Choice (4)Response

a.

– 0.47

b.

– 1.2

c.

– 3.8

d.

Question does not provide sufficient data or is vague

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