Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 151 - 153 of 161

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Question 151

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2020

Question

MCQ▾

The base of an npn BJT has a linear doping profile as shown below, The base of another npn BJT has a uniform doping of . All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of is

A Linear Doping Profile

Choices

Choice (4)Response

a.

approximately 2 times that of

b.

approximately 0.5 times that of

c.

approximately 0.3 times that of

d.

None of the above

Question 152

Electronic Devices
Generation and Recombination of Carriers

Appeared in Year: 2021

Question

MCQ▾

A bar of silicon is doped with boron concentration of and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of . If the recombination lifetime is , intrinsic carrier concentration of silicon is and assuming 100 % ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is

Choices

Choice (4)Response

a.

b.

c.

d.

Question 153

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2021

Question

MCQ▾

In the circuit shown in the figure, the transistors and are operating in saturation. The channel length modulation coefficients of both the transistors are non-zero. The transconductance of the MOSFETs and are and respectively and internal resistance of MOSFETS and are and , respectively.

The Channel Length Modulation

Ignoring the body effect, the ac small signal gain of the circuit is

Choices

Choice (4)Response

a.

b.

c.

d.

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