Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 143 - 146 of 161

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Question 143

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2015

Question

Numeric Answer▾

A piece of silicon is doped uniformly with phosphorous with a doping concentration of . The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is The conductivity (in ) of the silicon sample at is ________

Question 144

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2015

Question

Numeric Answer▾

In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6 V. The output voltage (in volts) is …

The Zener Voltage

Question 145

Electronic Devices
Diffusion Current, Drift Current, Mobility and Resistivity

Appeared in Year: 2017

Question

Numeric Answer▾

The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of and electronic charge If a bias of is applied across a region of this semiconductor, the resulting current density in this region, in , is …

The Resulting Current Density in this Region

Question 146

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2015

Question

Numeric Answer▾

The built-in potential of an abrupt p-n junction is 0.75 V. If its junction capacitance at a reverse bias of 1.25 V is 5 pF, the value of (in pF) when is …

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