Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 139 - 142 of 161

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Question 139

Electronic Devices
Photolithography and Twin-Tub CMOS Process

Appeared in Year: 2019

Question

Numeric Answer▾

A CMOS inverter, designed to have a mid-point voltage equal to half of , as shown in the figure, has the following parameters:

;

The ratio of is equal to ________ (rounded off to 3 decimal places) .

(Carry One Mark Each)

A CMOS Inverter

Question 140

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2017

Question

Numeric Answer▾

Consider the circuit shown in figure. Assume base to emitter voltage and common base current gain of transistor is unity.

The Value of the Collector to Emitter Voltage

The value of the collector to emitter voltage (in volts) is …

Question 141

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2017

Question

MCQ▾

A Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of and corresponding to the and regions respectively. At the operational temperature T, assume complete impurity ionization, , and intrinsic carrier concentration to be . What is the magnitude of the built-in potential of this device?

Choices

Choice (4)Response

a.

b.

c.

d.

Question 142

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2016

Question

Numeric Answer▾

Assume that the diode in the figure has , but is otherwise ideal.

The Figure Has V_on = 0.7 V, but is Otherwise Ideal

The magnitude of the current is equal to …

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