Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 124 - 126 of 161

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Question 124

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2016

Question

MCQ▾

Consider avalanche breakdown in a silicon junction. The n-region is uniformly doped with a donor density . Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field Assume to be independent of . If the built-in voltage of the junction is much smaller than the breakdown voltage, , the relationship between , the relationship between and is given by

Choices

Choice (4)Response

a.

b.

c.

d.

Question 125

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2016

Question

MCQ▾

The characteristics of three types of diodes at the room temperature, made of semiconductors X, Y and Z, are shown in the figure. Assume that the diodes are uniformly doped and identical in all respects except their materials. If and are the band gaps of X, Y and Z, respectively, then

Characteristics of Three Types of Diodes

Choices

Choice (4)Response

a.

b.

No relationship among these band gaps exists

c.

d.

Question 126

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2017

Question

Numeric Answer▾

For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage and its trans-conductance parameter Neglect channel length modulation and body bias effects. Under these conditions the drain current in mA is …

Under These Conditions the Drain Current

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