Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 121 - 123 of 161

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Question 121

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2016

Question

Numeric Answer▾

Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of . Assume that the threshold voltage is and the channel length modulation parameter is . In the saturation region, the drain conductance (in micro siemens) is …

Question 122

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2016

Question

Numeric Answer▾

Consider a region of silicon devoid of electrons and holes, with an ionized donor density of . The electric field at is and the electric field at is in the positive x direction. Assume that the electric field is zero in the y and z directions at all points

Assume That the Electric Field is Zero in the Y and Z

Given , the value of L in nm is …

Question 123

Electronic Devices
Oxidation, Diffusion, Ion Implantation

Appeared in Year: 2019

Question

Numeric Answer▾

A Germanium sample of dimensions is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected form the silicon dioxide- Germanium interface, one-third is absorbed in the Germanium layer, and one-third is transmitted through the other side of the sample. If the absorption coefficient of Germanium at 600 nm is the band gap is 0.66 eV, the thickness of the Germanium layer, rounded off to 3 decimal places, is ________ . (Carry One Mark Each)

A Germanium Sample of Dimensions

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