Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics & CE (EC)]: Questions 118 - 121 of 237
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Question 118
Appeared in Year: 2016
Question MCQ▾
A long-channel NMOS transistor is biased in the linear region with and is used as a resistance. Which one of the following statements is not correct?
Choices
Choice (4) | Response | |
---|---|---|
a. | If the threshold voltage is reduced, the resistance decreases. | |
b. | If the device width W is increased, the resistance decreases. | |
c. | If the device length L is increased, the resistance increases. | |
d. | If is increased, the resistance increases |
Question 119
Appeared in Year: 2016
Question MCQ▾
The logic functionality realized by the circuit shown below is
Choices
Choice (4) | Response | |
---|---|---|
a. | OR | |
b. | XOR | |
c. | AND | |
d. | NAND |
Question 120
Appeared in Year: 2016
Question Numeric Answer▾
The diodes and in the figure are ideal and the capacitors are identical. The product RC is very large compared to the time period of the ac voltage. If the diodes do not breakdown in the reverse bias, the output voltage at the steady state is …
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Appeared in Year: 2015
Question Numeric Answer▾
A dc voltage of 10 V is applied across an n-type silicon bar having a rectangular cross-section and a length of 1 cm as shown in figure. The donor doping concentration and the mobility of electrons are and , respectively. The average time (in ) taken by the electrons to move from one end of the bar to another end is …
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