Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 101 - 105 of 161

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Question 101

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2014 (UGC-NET)

Question

Assertion-Reason▾

Assertion(Ꭺ)

MOS ICs based on MOSFET structure find wide applications in digital field. (December)

Reason(Ꭱ)

MOS ICs have small size and are easy to fabricate.

Choices

Choice (4)Response

a.

Both Ꭺ and Ꭱ are true but Ꭱ is NOT the correct explanation of Ꭺ

b.

Both Ꭺ and Ꭱ are true and Ꭱ is the correct explanation of Ꭺ

c.

Ꭺ is false but Ꭱ is true

d.

Ꭺ is true but Ꭱ is false

Question 102

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

Which one of the following is not LED material? (December)

1. Ga As

2. Ga P

3. Si

4. SiO2

Choices

Choice (4)Response

a.

2 & 3

b.

3 & 4

c.

1 & 2

d.

1 & 4

Question 103

Electronic Devices
Generation and Recombination of Carriers

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

A PIN diode cannot be used as (December)

i. Microwave switch

ii. Microwave mixer

iii. Microwave detector

Which is correct?

Choices

Choice (4)Response

a.

i, iii

b.

i, ii

c.

i, ii, iii

d.

ii, iii

Question 104

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Question

MCQ▾

The pinch off voltage for a n-channel JFET is 4 V, when , so find the value of pinch-off voltage for drain to source voltage :

Choices

Choice (4)Response

a.

3 V.

b.

4 V.

c.

5 V.

d.

1 V.

Question 105

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

Which of the following quantities cannot be measured/determined using HALL effect? (December)

1. Type of semiconductor (p or n)

2. Band gap

3. Diffusion constant

4. Carrier concentration

Choices

Choice (4)Response

a.

1 & 2

b.

1 & 3

c.

1 & 4

d.

2 & 3

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