Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 98 - 100 of 161

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Question 98

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2010

Question

MCQ▾

Compared to a p-n junction with , which one of the following statements is TRUE for a p-n junction with ?

Choices

Choice (4)Response

a.

Reverse breakdown voltage is higher and depletion capacitance is higher

b.

Reverse breakdown voltage is lower and depletion capacitance is lower

c.

Reverse breakdown voltage is lower and depletion capacitance is higher

d.

Reverse breakdown voltage is higher and depletion capacitance is lower

Question 99

Electronic Devices
Oxidation, Diffusion, Ion Implantation

Appeared in Year: 2019

Question

MCQ▾

A standard CMOS inverter is designed with equal rise and fall times . If the width of the pMOS transistor in the inverter is increased, what would be the effect on the LOW noise margin (NML) and the HIGH noise margin ? (Carry One Mark Each)

Choices

Choice (4)Response

a.

Both and increase

b.

No change in the noise margins

c.

increases and decrease

d.

decreases and increases

Question 100

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

The threshold voltage of an n-channel MOSFET can be increased by (December)

Choices

Choice (4)Response

a.

Reducing the channel dopant concentration

b.

Reducing the channel length

c.

Reducing the gate oxide thickness

d.

Increasing the channel dopant concentration

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