# Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 89 - 92 of 161

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## Question 89

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2019

### Question

MCQ▾

The quantum efficiency (η) and responsivity (R) at a wavelength (in µm) in a p-i-n photodetector are related by (Carry One Mark Each)

### Choices

Choice (4)Response

a.

b.

c.

d.

## Question 90

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2019

### Question

MCQ▾

The correct circuit representation of the structure shown in the figure is

(Carry One Mark Each)

### Choices

Choice (4)Response

a.

b.

c.

d.

## Question 91

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2019

### Question

MCQ▾

In the circuit shown, the breakdown voltage and the maximum current of the Zener diode are 20 V and 60 mA, respectively. The values of and are and respectively. What is the range of that will maintain the Zener diode in the ‘n’ state?

(Carry One Mark Each)

### Choices

Choice (4)Response

a.

18 V to 24 V

b.

24 V to 36V

c.

20 V to 28 V

d.

22 V to 34 V

## Question 92

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2019

### Question

MCQ▾

The figure shows the high- frequency C-V curve of a MOS capacitor (at T = 300 K) with V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points. (Carry One Mark Each)

### Choices

Choice (4)Response

a.

R, P, Q

b.

Q, P, R

c.

P, Q, R

d.

Q, R, P

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