Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 89 - 92 of 161

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Question 89

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2019

Question

MCQ▾

The quantum efficiency (η) and responsivity (R) at a wavelength (in µm) in a p-i-n photodetector are related by (Carry One Mark Each)

Choices

Choice (4)Response

a.

b.

c.

d.

Question 90

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2019

Question

MCQ▾

The correct circuit representation of the structure shown in the figure is

(Carry One Mark Each)

The Correct Circuit Representation of the Structure

Choices

Choice (4)Response

a.

The Correct Circuit Representation of the Structure

b.

The Correct Circuit Representation of the Structure

c.

The Correct Circuit Representation of the Structure

d.

The Correct Circuit Representation of the Structure

Question 91

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2019

Question

MCQ▾

In the circuit shown, the breakdown voltage and the maximum current of the Zener diode are 20 V and 60 mA, respectively. The values of and are and respectively. What is the range of that will maintain the Zener diode in the ‘n’ state?

(Carry One Mark Each)

The Breakdown Voltage

Choices

Choice (4)Response

a.

18 V to 24 V

b.

24 V to 36V

c.

20 V to 28 V

d.

22 V to 34 V

Question 92

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2019

Question

MCQ▾

The figure shows the high- frequency C-V curve of a MOS capacitor (at T = 300 K) with V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points. (Carry One Mark Each)

The High- Frequency C-V Curve of a MOS Capacitor

Choices

Choice (4)Response

a.

R, P, Q

b.

Q, P, R

c.

P, Q, R

d.

Q, R, P

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