Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 84 - 88 of 161

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Question 84

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Question

MCQ▾

In an FET as is changed from zero to increasing reverse bias, the value of gm … ?

Choices

Choice (4)Response

a.

Increased

b.

Falls suddenly to zero

c.

Remains constant

d.

Decreased

Question 85

Electronic Devices
Generation and Recombination of Carriers

Question

MCQ▾

Choose the option from the following which is called as the current regulating device?

Choices

Choice (4)Response

a.

Transistor

b.

Diode

c.

MosFet

d.

Resistor

Question 86

Electronic Devices
Generation and Recombination of Carriers

Question

MCQ▾

A rectangular waveguide having mode as dominant mode is having a cut off frequency of for the mode. The inner broad – wall dimension of the rectangular waveguide is

Choices

Choice (4)Response

a.

b.

c.

d.

Question 87

Electronic Devices
Oxidation, Diffusion, Ion Implantation

Appeared in Year: 2010

Question

MCQ▾

Thin gate oxide in a CMOS process in preferably grown using

Choices

Choice (4)Response

a.

Wet oxidation

b.

Dry oxidation

c.

Epitaxial deposition

d.

Ion implantation

Question 88

Electronic Devices
Diffusion Current, Drift Current, Mobility and Resistivity

Appeared in Year: 2019

Question

MCQ▾

In the circuits shown, the threshold voltage of each transistor is . Ignoring the effect of channel length modulation and body bias, the values of and , respectively, in volts, are (Carry One Mark Each)

The Threshold Voltage of Each nMOS Transistor

Choices

Choice (4)Response

a.

1.8 and 1.2

b.

2.4 and 1.2

c.

1.8 and 2.4

d.

2.4 and 2.4

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