Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 79 - 83 of 161

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Passage

Comprehension:

Read the passage and answer the following five questions:

P-i-n photodiode contains a layer of intrinsic semi-conductor material sandwiched between p-and-n regions. The depletion layer is wholly contained within the i region. Thickness of the intrinsic region can be adjusted to produce device with optimum sensitivity and frequency response. P-i-n photodiode is most common type of depletion layer photodiode.

The other classes of photodiodes, avalanche photodiodes, are reverse-biased p-n junction diodes that are operated at voltages above the breakdown voltage. Current multiplication of electron-hole pairs generated by the incident electromagnetic radiation occurs due to avalanche process. The photo multiplication factor is defined as ratio of the multiplied photocurrent to the photocurrent at voltage below breakdown where no avalanche multiplication takes place.

Question 79 (4 of 4 Based on Passage)

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

Semiconductors are sensitive to (September)

Choices

Choice (4)Response

a.

Magnetic field

b.

Heat

c.

Light energy

d.

All a., b. and c. are correct

Question 80

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

A JFET has (September)

Choices

Choice (4)Response

a.

Four built-in diode

b.

Three built-in diode

c.

One built-in diode

d.

Two built-in diode

Question 81

Electronic Devices
Generation and Recombination of Carriers

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

Arrange the following in terms of their increasing conductivity: (September)

1. Copper

2. Steel

3. Leather

4. Rubber

The correct sequence is

Choices

Choice (4)Response

a.

4,3, 2,1

b.

3,4, 2,1

c.

2,1, 3,4

d.

4,3, 1,2

Question 82

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2014 (UGC-NET)

Question

Assertion-Reason▾

Assertion(Ꭺ)

An EDFA is usually pumped at 980 nm wavelength, which means that Erbium ions at ground level absorb energy. (June)

Reason(Ꭱ)

This absorbed energy is transferred to high frequency signals to boost up.

Choices

Choice (4)Response

a.

Ꭺ is false but Ꭱ is true

b.

Ꭺ is true but Ꭱ is false

c.

Both Ꭺ and Ꭱ are true but Ꭱ is NOT the correct explanation of Ꭺ

d.

Both Ꭺ and Ꭱ are false

Question 83

Electronic Devices
Oxidation, Diffusion, Ion Implantation

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

Following are the process steps to fabricate an IC: (September)

1. Crystal growth

2. Epitaxial growth

3. Photo etching

4. Diffusion

5. Vacuum evaporation of Aluminium

The correct sequence of fabrication is

Choices

Choice (4)Response

a.

1, 5,3, 4,2

b.

1, 2,3, 4,5

c.

1, 2,4, 3,5

d.

1, 3,2, 4,5

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