Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 75 - 78 of 161

Access detailed explanations (illustrated with images and videos) to 1176 questions. Access all new questions- tracking exam pattern and syllabus. View the complete topic-wise distribution of questions. Unlimited Access, Unlimited Time, on Unlimited Devices!

View Sample Explanation or View Features.

Rs. 450.00 -OR-

How to register? Already Subscribed?

Question 75

Electronic Devices
Oxidation, Diffusion, Ion Implantation

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

What is the correct sequence of the following step in the fabrication of a monolithic, bipolar junction transistor? (June)

1. Emitter diffusion

2. Base diffusion

3. Buried layer formation

4. Epi-layer formation

Select the correct sequence using the codes given below:

Choices

Choice (4)Response

a.

4,3, 2,1

b.

3,4, 1,2

c.

4,3, 1,2

d.

3,4, 2,1

Passage

Comprehension:

Read the passage and answer the following five questions:

P-i-n photodiode contains a layer of intrinsic semi-conductor material sandwiched between p-and-n regions. The depletion layer is wholly contained within the i region. Thickness of the intrinsic region can be adjusted to produce device with optimum sensitivity and frequency response. P-i-n photodiode is most common type of depletion layer photodiode.

The other classes of photodiodes, avalanche photodiodes, are reverse-biased p-n junction diodes that are operated at voltages above the breakdown voltage. Current multiplication of electron-hole pairs generated by the incident electromagnetic radiation occurs due to avalanche process. The photo multiplication factor is defined as ratio of the multiplied photocurrent to the photocurrent at voltage below breakdown where no avalanche multiplication takes place.

Question 76 (1 of 4 Based on Passage)

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

Which of the following elements is a semiconductor? (September)

Choices

Choice (4)Response

a.

Carbon

b.

Phosphorous

c.

Germanium

d.

Copper

Question 77 (2 of 4 Based on Passage)

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

Photo-diode is reverse biased because (September)

Choices

Choice (4)Response

a.

Majority swept are reverse biased across the function

b.

Reverse current is small as compared to photo current

c.

Reverse current is large as compared to photocurrent

d.

Only one side is illuminated

Question 78 (3 of 4 Based on Passage)

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

When a reverse bias is applied to a junction diode (September)

Choices

Choice (4)Response

a.

Minority carrier current is increased

b.

Potential barrier is lowered

c.

Majority carrier current is increased

d.

Potential barrier is raised

Developed by: