Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics & CE (EC)]: Questions 72 - 75 of 237
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Question 72
Appeared in Year: 2014
Question MCQ▾
The threshold voltage of a MOSFET can be lowered by (June)
1. Using a thinner gate oxide
2. Reducing the carrier concentration in the substrate
3. Increasing the carrier concentration in the substrate
Of these statements:
Choices
Choice (4) | Response | |
---|---|---|
a. | 1 and 2 are correct | |
b. | 2 alone is correct | |
c. | 3 alone is correct. | |
d. | 1 and 3 are correct |
Question 73
Appeared in Year: 2013
Question MCQ▾
A semiconductor has ________ temperature co-efficient of resistance (September)
Choices
Choice (4) | Response | |
---|---|---|
a. | Positive | |
b. | One | |
c. | Negative | |
d. | Zero |
Question 74
Appeared in Year: 2014
Question Match List-Ⅰ List-Ⅱ▾
Match the following lists: (June)
List-Ⅰ (Devices) | List-Ⅱ (Characteristics) |
---|---|
(A) Tunnel diode | (i) Voltage regulation |
(B) BJT | (ii) High current gain |
(C) MOSFET | (iii) High input impedance |
(D) Zener diode | (iv) Voltage controlled negative resistance |
Choices
Choice (4) | Response | |
---|---|---|
| ||
a. |
| |
b. |
| |
c. |
| |
d. |
|
Question 75
Appeared in Year: 2013
Question Match List-Ⅰ List-Ⅱ▾
Match the following lists: (September)
List-Ⅰ (Column I) | List-Ⅱ (Column II) |
---|---|
(A) LED | (i) Heavily doped |
(B) Laser | (ii) Spontaneous emission |
(C) Tunnel diode | (iii) Current gain |
(D) APD | (iv) Coherent radiation |
Choices
Choice (4) | Response | |
---|---|---|
| ||
a. |
| |
b. |
| |
c. |
| |
d. |
|