Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics & CE (EC)]: Questions 72 - 75 of 237

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Question 72

Appeared in Year: 2014

Question MCQ▾

The threshold voltage of a MOSFET can be lowered by (June)

1. Using a thinner gate oxide

2. Reducing the carrier concentration in the substrate

3. Increasing the carrier concentration in the substrate

Of these statements:

Choices

Choice (4)Response

a.

1 and 2 are correct

b.

2 alone is correct

c.

3 alone is correct.

d.

1 and 3 are correct

Edit

Question 73

Appeared in Year: 2013

Question MCQ▾

A semiconductor has ________ temperature co-efficient of resistance (September)

Choices

Choice (4)Response

a.

Positive

b.

One

c.

Negative

d.

Zero

Edit

Question 74

Appeared in Year: 2014

Question Match List-Ⅰ List-Ⅱ▾

Match the following lists: (June)

List-Ⅰ (Devices)List-Ⅱ (Characteristics)
(A)

Tunnel diode

(i)

Voltage regulation

(B)

BJT

(ii)

High current gain

(C)

MOSFET

(iii)

High input impedance

(D)

Zener diode

(iv)

Voltage controlled negative resistance

Choices

Choice (4)Response
  • (A)
  • (B)
  • (C)
  • (D)

a.

  • (iv)
  • (i)
  • (iii)
  • (ii)

b.

  • (iii)
  • (iv)
  • (i)
  • (ii)

c.

  • (iii)
  • (ii)
  • (i)
  • (iv)

d.

  • (iv)
  • (ii)
  • (iii)
  • (i)

Edit

Question 75

Appeared in Year: 2013

Question Match List-Ⅰ List-Ⅱ▾

Match the following lists: (September)

List-Ⅰ (Column I)List-Ⅱ (Column II)
(A)

LED

(i)

Heavily doped

(B)

Laser

(ii)

Spontaneous emission

(C)

Tunnel diode

(iii)

Current gain

(D)

APD

(iv)

Coherent radiation

Choices

Choice (4)Response
  • (A)
  • (B)
  • (C)
  • (D)

a.

  • (iii)
  • (i)
  • (iv)
  • (ii)

b.

  • (iv)
  • (i)
  • (iii)
  • (ii)

c.

  • (ii)
  • (iv)
  • (i)
  • (iii)

d.

  • (iii)
  • (iv)
  • (i)
  • (ii)

Edit