Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 68 - 70 of 161

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Question 68

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2014 (UGC-NET)

Question

Assertion-Reason▾

Assertion(Ꭺ)

If a semiconductor is placed in a transverse magnetic field B and an electric field E is applied across its other two faces, then it would produce an electric current ‘I’ in the direction perpendicular to both B and E. (June)

Reason(Ꭱ)

Hall coefficient is proportional to the mobility of the charge carriers in the semiconductor.

Choices

Choice (4)Response

a.

Both Ꭺ and Ꭱ are false

b.

Both Ꭺ and Ꭱ are true and Ꭱ is the correct explanation of Ꭺ

c.

Ꭺ is false but Ꭱ is true

d.

Both Ꭺ and Ꭱ are true but Ꭱ is NOT the correct explanation of Ꭺ

Question 69

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

The carrier velocity in a silicon p-i-n photodiode with depletion layer width is m/s. The longest transit time is for the carriers is given by: (June)

Choices

Choice (4)Response

a.

62 ns

b.

2.5 ns

c.

8.3 ns

d.

52 ns

Question 70

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

Semiconductors have (June)

Choices

Choice (4)Response

a.

Negative temperature coefficient of resistance

b.

Resistance does not change with temperature

c.

Zero temperature coefficient of resistance

d.

Positive temperature coefficient of resistance

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