Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics & CE (EC)]: Questions 65 - 68 of 237
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Question 65
Appeared in Year: 2014
Question MCQ▾
For a JFET, above the pinch-off voltage, as the drain voltage increases, the (June)
Choices
Choice (4) | Response | |
---|---|---|
a. | The drain current increases linearly. | |
b. | The drain current varies parabolically. | |
c. | The drain current decreases. | |
d. | The drain current remains constant. |
Question 66
Appeared in Year: 2013
Question MCQ▾
The p-n junction diode is a (September)
Choices
Choice (4) | Response | |
---|---|---|
a. | Vacuum device | |
b. | Unilateral device | |
c. | Passive device | |
d. | Bilateral device |
Question 67
Question MCQ▾
The drift velocity of electrons, in silicon …
Choices
Choice (4) | Response | |
---|---|---|
a. | Increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field | |
b. | Is independent of the electric field | |
c. | Increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance | |
d. | Is proportional to the electric field for all values of electric field |
Question 68
Appeared in Year: 2014
Question MCQ▾
Microprocessor development had happened because of LSI. What is LSI? (June)
Choices
Choice (4) | Response | |
---|---|---|
a. | Large Scale Integration | |
b. | Large Scale Integral | |
c. | Large Signal Integration | |
d. | Long Signal Integration |