Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics & CE (EC)]: Questions 65 - 68 of 237

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Question 65

Appeared in Year: 2014

Question MCQ▾

For a JFET, above the pinch-off voltage, as the drain voltage increases, the (June)

Choices

Choice (4)Response

a.

The drain current increases linearly.

b.

The drain current varies parabolically.

c.

The drain current decreases.

d.

The drain current remains constant.

Edit

Question 66

Appeared in Year: 2013

Question MCQ▾

The p-n junction diode is a (September)

Choices

Choice (4)Response

a.

Vacuum device

b.

Unilateral device

c.

Passive device

d.

Bilateral device

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Question 67

Question MCQ▾

The drift velocity of electrons, in silicon …

Choices

Choice (4)Response

a.

Increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field

b.

Is independent of the electric field

c.

Increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance

d.

Is proportional to the electric field for all values of electric field

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Question 68

Appeared in Year: 2014

Question MCQ▾

Microprocessor development had happened because of LSI. What is LSI? (June)

Choices

Choice (4)Response

a.

Large Scale Integration

b.

Large Scale Integral

c.

Large Signal Integration

d.

Long Signal Integration

Edit