Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 64 - 67 of 161

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Question 64

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

For a JFET, above the pinch-off voltage, as the drain voltage increases, the (June)

Choices

Choice (4)Response

a.

The drain current increases linearly.

b.

The drain current varies parabolically.

c.

The drain current decreases.

d.

The drain current remains constant.

Question 65

Electronic Devices
Generation and Recombination of Carriers

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

The p-n junction diode is a (September)

Choices

Choice (4)Response

a.

Vacuum device

b.

Unilateral device

c.

Passive device

d.

Bilateral device

Question 66

Electronic Devices
Generation and Recombination of Carriers

Question

MCQ▾

The drift velocity of electrons, in silicon …

Choices

Choice (4)Response

a.

Increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field

b.

Is independent of the electric field

c.

Increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance

d.

Is proportional to the electric field for all values of electric field

Question 67

Electronic Devices
Oxidation, Diffusion, Ion Implantation

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

Microprocessor development had happened because of LSI. What is LSI? (June)

Choices

Choice (4)Response

a.

Large Scale Integration

b.

Large Scale Integral

c.

Large Signal Integration

d.

Long Signal Integration

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