Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 59 - 63 of 161

Access detailed explanations (illustrated with images and videos) to 1176 questions. Access all new questions- tracking exam pattern and syllabus. View the complete topic-wise distribution of questions. Unlimited Access, Unlimited Time, on Unlimited Devices!

View Sample Explanation or View Features.

Rs. 450.00 -OR-

How to register? Already Subscribed?

Question 59

Electronic Devices
Generation and Recombination of Carriers

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

Photoconductive devices are made of

Choices

Choice (4)Response

a.

Radioactive materials

b.

Highly conductive materials

c.

Highly insulating materials

d.

Semiconductor materials

Question 60

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

Which of the following devices is suitable for very low power oscillator circuits only?

Choices

Choice (4)Response

a.

IMPATT diode

b.

Tunnel diode

c.

TRAPATT diode

d.

Gunn diode

Question 61

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2013 (UGC-NET)

Question

MCQ▾

The current in a Zener diode is controlled by

Choices

Choice (4)Response

a.

Potential barrier

b.

Impact ionization

c.

Zener diode resistance

d.

External circuits resistance

Question 62

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

Consider the following Excimer Lasers used for photolithography and surgery purposes: (June)

1. Ar-2 Excimer laser

2. ArF Excimer laser

3. XeCl Excimer laser

4. XeF Excimer laser

The correct sequence of the descending order of wavelength of operation is

Choices

Choice (4)Response

a.

1,2, 3,4

b.

2,3, 1,4

c.

4,3, 2,1

d.

1,3, 2,4

Question 63

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2013 (UGC-NET)

Question

Match List-Ⅰ List-Ⅱ▾

Match the following lists: (September)

List-Ⅰ (Band Gap in EV)List-Ⅱ (Materials)
(A)

1.4

(i)

Cadmium sulphate

(B)

0.67

(ii)

Ge

(C)

2.4

(iii)

Ga As

(D)

1.1

(iv)

Si

Choices

Choice (4)Response
  • (A)
  • (B)
  • (C)
  • (D)

a.

  • (iii)
  • (iv)
  • (i)
  • (ii)

b.

  • (iii)
  • (ii)
  • (i)
  • (iv)

c.

  • (iv)
  • (i)
  • (ii)
  • (iii)

d.

  • (ii)
  • (iv)
  • (iii)
  • (i)

Developed by: