Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 33 - 38 of 161

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Question 33

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2018 (UGC-NET)

Question

MCQ▾

An exact position of Fermi level in an n-type semiconductor is (December)

Choices

Choice (4)Response

a.

b.

c.

d.

Question 34

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2018 (UGC-NET)

Question

Assertion-Reason▾

Assertion(Ꭺ)

The drain induced barrier lowering and channel length modulation are some of the short channel effects in MOSFET. (December)

Reason(Ꭱ)

The cut-off frequency of a MOSFET is independent of gate to source and gate to drain capacitance.

Choices

Choice (4)Response

a.

Both Ꭺ and Ꭱ are false

b.

Ꭺ is false but Ꭱ is true

c.

Both Ꭺ and Ꭱ are true but Ꭱ is NOT the correct explanation of Ꭺ

d.

Both Ꭺ and Ꭱ are true and Ꭱ is the correct explanation of Ꭺ

Passage

Read the passage and answer the following five questions:

The metal oxide semiconductor field effect transistor is the most important device for very large scale integrated circuits such as microprocessor and semiconductor memories. MOSFET is also becoming a power device. The principle of field effect transistor was first proposed by Dillen Field in 1930. The current in a MOSFET is transported by carriers of one polarity and is usually referred as unipolar device. The MOSFET is a member of the family of field effect transistors. It is fabricated with various semiconductors such as Si, GaAs and SiC with various insulators. The most important system is Si – SiO2 interface.

Question 35 (1 of 5 Based on Passage)

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2016 (UGC-NET)

Question

MCQ▾

The Trans conductance in linear region is

Choices

Choice (4)Response

a.

b.

c.

d.

Question 36 (2 of 5 Based on Passage)

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2016 (UGC-NET)

Question

MCQ▾

The surface charge per unit area after strong inversion is given by

Choices

Choice (4)Response

a.

b.

c.

d.

Question 37 (3 of 5 Based on Passage)

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2016 (UGC-NET)

Question

MCQ▾

The cut off frequency of a MOSFET can be defined as

Choices

Choice (4)Response

a.

b.

c.

d.

Question 38 (4 of 5 Based on Passage)

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2016 (UGC-NET)

Question

MCQ▾

The threshold voltage of a MOSFET is

Choices

Choice (4)Response

a.

b.

c.

d.

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