Electronic Devices [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 1 - 5 of 161

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Question 1

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2017 (UGC-NET)

Question

MCQ▾

The depletion region in a junction diode contains charges that are: (November paper 2)

Choices

Choice (4)Response

a.

Mostly minority carriers

b.

Fixed donor and acceptor ion

c.

Mobile donor and acceptor ion

d.

Mostly majority carriers

Question 2

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2017 (UGC-NET)

Question

MCQ▾

The operation of JFET involves mainly:

(1) Flow of Minority carriers

(2) Flow of Majority carriers

(3) A very high input impedance

(4) Negative resistance

Which of the following is correct? (November paper 2)

Choices

Choice (4)Response

a.

(3) and (1)

b.

(3) and (4)

c.

(2) and (3)

d.

(1) and (2)

Question 3

Electronic Devices
MOSFET, LED, Photo Diode and Solar Cell

Appeared in Year: 2018 (UGC-NET)

Question

MCQ▾

In a JFET, the maximum value of Trans conductance is: (July)

Choices

Choice (4)Response

a.

b.

c.

d.

Question 4

Electronic Devices
P-N Junction,Zener Diode,BJT,MOS Capacitor

Appeared in Year: 2018 (UGC-NET)

Question

MCQ▾

In an abrupt p-n junction if , then the barrier potential is: (July)

1)

2)

3)

4)

Choices

Choice (4)Response

a.

1) is correct but 3) is wrong

b.

2) is correct but 4) is wrong

c.

3) is correct but 1) is wrong

d.

4) is correct but 2) is wrong

Question 5

Electronic Devices
Generation and Recombination of Carriers

Appeared in Year: 2018 (UGC-NET)

Question

MCQ▾

In an intrinsic semiconductor, the intrinsic carrier density is: (July)

Choices

Choice (4)Response

a.

b.

c.

d.

Developed by: