Communications-Random Processes [GATE (Graduate Aptitude Test in Engineering) Electronics]: Questions 1 - 4 of 8
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Question 1
Appeared in Year: 2013
Question MCQ▾
Out of the following memory types, one that is volatile is (June)
Choices
Choice (4) | Response | |
---|---|---|
a. | Magnetic disc | |
b. | Ferrite core | |
c. | Semiconductor RAM | |
d. | Semiconductor ROM |
Question 2
Appeared in Year: 2014
Question Match List-Ⅰ List-Ⅱ▾
Match the following lists: (June)
List-Ⅰ (Column-I) | List-Ⅱ (Column-II) |
---|---|
(A) Partition Noise | (i) Resistance |
(B) Shot Noise | (ii) Triode |
(C) Johnson Noise | (iii) P-N junction |
(D) Current Noise | (iv) Diode |
Choices
Choice (4) | Response | |
---|---|---|
| ||
a. |
| |
b. |
| |
c. |
| |
d. |
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Question 3
Appeared in Year: 2016
Question Numeric Answer▾
Light from free space is incident at an angle to the normal of the facet of a step index large core optical fibre. The core and cladding refractive indices are and , respectively.
The maximum value of (in degrees) for which the incident light will be guided in the core of the fibre is …
EditQuestion 4
Appeared in Year: 2015
Question MCQ▾
Which one of the following process is preferred to form the gate dielectric (Si ) of MOSFETs?
Choices
Choice (4) | Response | |
---|---|---|
a. | Dry oxidation | |
b. | Molecular beam epitaxy | |
c. | Sputtering | |
d. | Wet oxidation |