GATE (Graduate Aptitude Test in Engineering) Electronics: Questions 312 - 314 of 1076

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Question 312

Appeared in Year: 2018 (UGC-NET)

Question

MCQ▾

When acceptor impurities of concentration are added to a semiconductor crystal, when n is the electron density in the conduction band and p is the hole density in the valence band, the ionised acceptors are given as:

1)

2)

3)

4)

Of the statements: (July)

Choices

Choice (4)Response

a.

1) and 2) are wrong

b.

1) is correct but 3) is wrong

c.

3) is correct but 4) is wrong

d.

4) is correct but 3) is wrong

Question 313

Appeared in Year: 2018 (UGC-NET)

Question

Match List-Ⅰ List-Ⅱ▾

Match the following: (July)

List-Ⅰ (Column-I)List-Ⅱ (Column-II)
(A)

Gunn diode

(i)

q (

(B)

MOSFET

(ii)

(C)

JFET

(iii)

(D)

BJT

(iv)

Choices

Choice (4)Response
  • (A)
  • (B)
  • (C)
  • (D)

a.

  • (iv)
  • (i)
  • (ii)
  • (iii)

b.

  • (i)
  • (iv)
  • (ii)
  • (iii)

c.

  • (i)
  • (iii)
  • (iv)
  • (ii)

d.

  • (iv)
  • (iii)
  • (ii)
  • (i)

Question 314

Appeared in Year: 2018 (UGC-NET)

Question

Match List-Ⅰ List-Ⅱ▾

Match the following: (July)

List-Ⅰ (Column-I)List-Ⅱ (Columm-II)
(A)

Change in the depletion layer

(i)

(B)

Threshold voltage

(ii)

(C)

Change in the inversion layer

(iii)

(D)

Surface potential at the onset of strong inversion

(iv)

Choices

Choice (4)Response
  • (A)
  • (B)
  • (C)
  • (D)

a.

  • (i)
  • (iv)
  • (ii)
  • (iii)

b.

  • (iv)
  • (iii)
  • (ii)
  • (i)

c.

  • (iv)
  • (i)
  • (iii)
  • (ii)

d.

  • (i)
  • (iv)
  • (iii)
  • (ii)

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