GATE Electronics: Questions 132 - 135 of 185

Get 1 year subscription: Access detailed explanations (illustrated with images and videos) to 185 questions. Access all new questions we will add tracking exam-pattern and syllabus changes. View Sample Explanation or View Features.

Rs. 150.00 or

Question number: 132

» Digital Circuits » Number Systems; Combinatorial Circuits » Logic Gates and Their Static CMOS Implementation

Appeared in Year: 2010

MCQ▾

Question

For the output F to be 1 in the logic circuit shown, the input combination should be

The combinational circuit consisting EX-OR gates

The Combinational Circuit Consisting EX-or Gates

The combinational circuit consisting three EX-OR gates with output F

Choices

Choice (4) Response

a.

A = 1, B = 0, C = 0

b.

A = 0, B = 1, C = 0

c.

A = 1, B = 1, C = 0

d.

All a. , b. and c. are correct

Question number: 133

» Analog Circuits » Simple Diode Circuits » Clipping, Clamping and Rectifiers

Appeared in Year: 2013

MCQ▾

Question

A voltage 1000 sinωt Volts is applied across YZ. Assuming ideal diodes, the voltage measured across WX in Volts, is

The circuit which has 4diodes connected in bridge configuration

The Circuit Which Has 4diodes Connected in Bridge Configuration

The circuit which has four diodes connected in bridge configuration

Choices

Choice (4) Response

a.

sinωt+|sinωt|2

b.

0 for all t

c.

sinωt

d.

sinωt|sinωt|2

Question number: 134

» Analog Circuits » Small Signal Equivalent Circuits of Diodes, BJTs and MOSFETs

Appeared in Year: 2012

MCQ▾

Question

The diodes and capacitors in the circuit shown are ideal. The voltage v (t) across the diode D1 is

Image showing The circuit consists of ideal diodes & capacitors

Image Showing the Circuit Consists of Ideal Diodes & Capacitors

The circuit consists of ideal diodes and capacitors

Choices

Choice (4) Response

a.

cos(wt)1

b.

1sin(wt)

c.

1cos(wt)

d.

sin(wt)

Question number: 135

» Analog Circuits » Small Signal Equivalent Circuits of Diodes, BJTs and MOSFETs

Appeared in Year: 2007

MCQ▾

Question

In a P+N junction diode under reverse bias, the magnitude of electric field is maximum at

Choices

Choice (4) Response

a.

The edge of the depletion region on N side

b.

The P+N junction

c.

The edge of the depletion region on P side

d.

The centre of the depletion region on the N side

Sign In