GATE (Graduate Aptitude Test in Engineering) Electronics: Questions 1051 - 1056 of 1076

Access detailed explanations (illustrated with images and videos) to 1076 questions. Access all new questions- tracking exam pattern and syllabus. View the complete topic-wise distribution of questions. Unlimited Access, Unlimited Time, on Unlimited Devices!

View Sample Explanation or View Features.

Rs. 450.00 -OR-

How to register? Already Subscribed?

Question 1051

Appeared in Year: 2015

Question

Numeric Answer▾

The diode in the circuit given below has but is ideal otherwise. The current (in mA) in the resistor is …

Balanced Bridge Condition

Question 1052

Appeared in Year: 2015

Question

Numeric Answer▾

The characteristics equation of an LTI system is given by . The number of roots that lie strictly in the left half of s-plane is …

Question 1053

Appeared in Year: 2016

Question

MCQ▾

Consider a two-port network with the transmission matrix: .

If the network is reciprocal then

Choices

Choice (4)Response

a.

b.

c.

d.

Question 1054

Appeared in Year: 2017

Question

MCQ▾

The clock frequency of an microprocessor is . If the time required to execute an instruction is , then the number of T-states needed for executing the instruction is

Choices

Choice (4)Response

a.

8

b.

6

c.

d.

1

Question 1055

Appeared in Year: 2016

Question

MCQ▾

In the given circuit, each resistor has a value equal to .

The Given Circuit, Each Resistor Has a Value Equal to 1 Ω

What is the equivalent resistance across the terminals a and b?

Choices

Choice (4)Response

a.

b.

c.

d.

Question 1056

Appeared in Year: 2015

Question

Numeric Answer▾

A piece of silicon is doped uniformly with phosphorous with a doping concentration of . The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is The conductivity (in ) of the silicon sample at is ________

Developed by: