GATE (Graduate Aptitude Test in Engineering) Electronics & CE (EC): Questions 1050 - 1055 of 1602
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Question 1050
Appeared in Year: 2015
Question Numeric Answer▾
The diode in the circuit given below has but is ideal otherwise. The current (in mA) in the resistor is …
EditQuestion 1051
Appeared in Year: 2015
Question Numeric Answer▾
The characteristics equation of an LTI system is given by . The number of roots that lie strictly in the left half of s-plane is …
EditQuestion 1052
Appeared in Year: 2016
Question MCQ▾
Consider a two-port network with the transmission matrix: .
If the network is reciprocal then
Choices
Choice (4) | Response | |
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a. | ||
b. | ||
c. | ||
d. |
Question 1053
Appeared in Year: 2017
Question MCQ▾
The clock frequency of an microprocessor is . If the time required to execute an instruction is , then the number of T-states needed for executing the instruction is
Choices
Choice (4) | Response | |
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a. | 8 | |
b. | 6 | |
c. | ||
d. | 1 |
Question 1054
Appeared in Year: 2016
Question MCQ▾
In the given circuit, each resistor has a value equal to .
What is the equivalent resistance across the terminals a and b?
Choices
Choice (4) | Response | |
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a. | ||
b. | ||
c. | ||
d. |
Question 1055
Appeared in Year: 2015
Question Numeric Answer▾
A piece of silicon is doped uniformly with phosphorous with a doping concentration of . The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is The conductivity (in ) of the silicon sample at is ________
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