GATE (Graduate Aptitude Test in Engineering) Electronics: Questions 985 - 989 of 1076

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Question 985

Appeared in Year: 2016

Question

MCQ▾

Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET) :

P: As channel length reduces, OFF-state current increases.

Q: As channel length reduces, output resistance increases.

R: As channel length reduces, threshold voltage remains constant.

S: As channel length reduces, ON current increases.

Which of the above statements are INCORRECT?

Choices

Choice (4)Response

a.

P and Q

b.

P and S

c.

Q and R

d.

R and S

Question 986

Appeared in Year: 2016

Question

MCQ▾

The Ebbers-Moll model of a BJT is valid

Choices

Choice (4)Response

a.

Only in active mode

b.

In active, saturation and cut-off modes

c.

Only in active and cut-off modes

d.

Only in active and saturation modes

Question 987

Time Domain Analysis of Simple Linear Circuits

Appeared in Year: 2015

Question

Numeric Answer▾

In the circuits shown the average value of the voltage (in volts) in steady state condition is …

Average Value of the Voltage

Question 988

Higher Order Linear Differential Equations

Appeared in Year: 2016

Question

Numeric Answer▾

The region specified by in cylindrical coordinates has volume of …

Question 989

Appeared in Year: 2015

Question

Numeric Answer▾

If C denotes the counter clockwise unit circle, the value of the contour integral is …

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