GATE (Graduate Aptitude Test in Engineering) Electronics: Questions 717 - 720 of 1076

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Question 717

Appeared in Year: 2019

Question

MCQ▾

The figure shows the high- frequency C-V curve of a MOS capacitor (at T = 300 K) with V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points. (Carry One Mark Each)

The High- Frequency C-V Curve of a MOS Capacitor

Choices

Choice (4)Response

a.

R, P, Q

b.

Q, P, R

c.

P, Q, R

d.

Q, R, P

Question 718

Multi-Stage, Differential, Feedback, Power and Operational

Appeared in Year: 2010

Question

MCQ▾

In a uniformly doped BJT, assume that , and are the emitter, base and collector doping in atoms/cm3, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following condition is TRUE?

Choices

Choice (4)Response

a.

b.

c.

d.

Question 719

Appeared in Year: 2010

Question

MCQ▾

Consider the pulse shape as shown. The impulse response of the filter matched to this pulse is

Consider the Pulse Shape S (T) as Shown

Choices

Choice (4)Response

a.

The Impulse Response H (T)

b.

The Impulse Response H (T)

c.

The Impulse Response H (T)

d.

The Impulse Response H (T)

Question 720

Steady State Sinusoidal Analysis Using Phasors

Appeared in Year: 2019

Question

MCQ▾

In the circuit shown, if volts, , and , then the steady-state current i (t) , in milliamperes (mA) is (Carry One Mark Each)

The Circuit

Choices

Choice (4)Response

a.

b.

c.

d.

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