GATE (Graduate Aptitude Test in Engineering) Electronics: Questions 607 - 610 of 1076

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Question 607

Appeared in Year: 2014 (UGC-NET)

Question

Match List-Ⅰ List-Ⅱ▾

Match the following lists: (June)

List-Ⅰ (Devices)List-Ⅱ (Characteristics)
(A)

Tunnel diode

(i)

Voltage regulation

(B)

BJT

(ii)

High current gain

(C)

MOSFET

(iii)

High input impedance

(D)

Zener diode

(iv)

Voltage controlled negative resistance

Choices

Choice (4)Response
  • (A)
  • (B)
  • (C)
  • (D)

a.

  • (iv)
  • (i)
  • (iii)
  • (ii)

b.

  • (iii)
  • (iv)
  • (i)
  • (ii)

c.

  • (iii)
  • (ii)
  • (i)
  • (iv)

d.

  • (iv)
  • (ii)
  • (iii)
  • (i)

Question 608

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

The following signals of microprocessors are interrupts: (June)

1.

2.

3.

4.

Choices

Choice (4)Response

a.

1 and 3

b.

2 and 3

c.

1 and 4

d.

3 and 4

Question 609

Appeared in Year: 2013 (UGC-NET)

Question

Match List-Ⅰ List-Ⅱ▾

Match the following lists: (September)

List-Ⅰ (Column I)List-Ⅱ (Column II)
(A)

LED

(i)

Heavily doped

(B)

Laser

(ii)

Spontaneous emission

(C)

Tunnel diode

(iii)

Current gain

(D)

APD

(iv)

Coherent radiation

Choices

Choice (4)Response
  • (A)
  • (B)
  • (C)
  • (D)

a.

  • (iii)
  • (i)
  • (iv)
  • (ii)

b.

  • (iv)
  • (i)
  • (iii)
  • (ii)

c.

  • (ii)
  • (iv)
  • (i)
  • (iii)

d.

  • (iii)
  • (iv)
  • (i)
  • (ii)

Question 610

Oxidation, Diffusion, Ion Implantation

Appeared in Year: 2014 (UGC-NET)

Question

MCQ▾

What is the correct sequence of the following step in the fabrication of a monolithic, bipolar junction transistor? (June)

1. Emitter diffusion

2. Base diffusion

3. Buried layer formation

4. Epi-layer formation

Select the correct sequence using the codes given below:

Choices

Choice (4)Response

a.

4,3, 2,1

b.

3,4, 1,2

c.

4,3, 1,2

d.

3,4, 2,1

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