GATE (Graduate Aptitude Test in Engineering) Electronics: Questions 580 - 581 of 1076

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Question 580

Appeared in Year: 2014 (UGC-NET)

Question

Match List-Ⅰ List-Ⅱ▾

Match the following: (June)

List-Ⅰ (Structure/Characteristics)List-Ⅱ (Reasons)
(A)

Channel is not completely closed

(i)

High electric field near the drain and directed towards source

(B)

Channel is wedge shaped

(ii)

Reverse bias increases along the channel than p-channel JFET

(C)

n-channel JFET is better

(iii)

Low leakage current at the gate terminal at pinch-off

(D)

Input impedance is high

(iv)

Better frequency performance since

Choices

Choice (4)Response
  • (A)
  • (B)
  • (C)
  • (D)

a.

  • (i)
  • (ii)
  • (iv)
  • (iii)

b.

  • (iii)
  • (i)
  • (ii)
  • (iv)

c.

  • (iv)
  • (i)
  • (ii)
  • (iii)

d.

  • (iv)
  • (i)
  • (iii)
  • (ii)

Question 581

Appeared in Year: 2014 (UGC-NET)

Question

Assertion-Reason▾

Assertion(Ꭺ)

If a semiconductor is placed in a transverse magnetic field B and an electric field E is applied across its other two faces, then it would produce an electric current ‘I’ in the direction perpendicular to both B and E. (June)

Reason(Ꭱ)

Hall coefficient is proportional to the mobility of the charge carriers in the semiconductor.

Choices

Choice (4)Response

a.

Both Ꭺ and Ꭱ are false

b.

Both Ꭺ and Ꭱ are true and Ꭱ is the correct explanation of Ꭺ

c.

Ꭺ is false but Ꭱ is true

d.

Both Ꭺ and Ꭱ are true but Ꭱ is NOT the correct explanation of Ꭺ

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