Electronics and Experimental Methods-Semiconductor Devices (CSIR (Council of Scientific & Industrial Research) Physical Sciences): Questions 1 - 4 of 6

Access detailed explanations (illustrated with images and videos) to 464 questions. Access all new questions we will add tracking exam-pattern and syllabus changes. Unlimited Access for Unlimited Time!

View Sample Explanation or View Features.

Rs. 300.00 or

How to register?

Question number: 1

» Electronics and Experimental Methods » Semiconductor Devices » Diodes

Edit

Appeared in Year: 2014

MCQ▾

Question

The I – V characteristic of the diode in the circuit below is given by,

Where V is measured in volts and I is measured in amperes.

Circuit diagram consist of diode and resistor

Circuit Diagram Consist of Diode and Resistor

The current I in circuit is – (December)

Choices

Choice (4)Response

a.

10.0 mA

b.

6.7 mA

c.

6.2 mA

d.

9.3 mA

Question number: 2

» Electronics and Experimental Methods » Semiconductor Devices » Diodes

Edit

Appeared in Year: 2012

MCQ▾

Question

A diode D as shown in the circuit has an I – V relation that can be approximated by –

The circuit consists of a diode, resistor and a battery

The Circuit Consists of a Diode, Resistor and a Battery

The value of in the circuit is – (December)

Choices

Choice (4)Response

a.

b.

c.

d.

Question number: 3

» Electronics and Experimental Methods » Semiconductor Devices » Diodes

Edit

Appeared in Year: 2013

MCQ▾

Question

Two identical Zener diodes are placed back to back in series and are connected to a variable DC power supply. The best representation of the I – V characteristics of the circuit is – (December)

Choices

Choice (4)Response

a.

I – V characteristics: Choice A

I – V Characteristics: Choice A

b.

I – V characteristics: Choice B

I – V Characteristics: Choice B

c.

I – V characteristics: Choice C

I – V Characteristics: Choice C

d.

I – V characteristics: Choice D

I – V Characteristics: Choice D

Question number: 4

» Electronics and Experimental Methods » Semiconductor Devices » Junctions

Edit

Appeared in Year: 2014

MCQ▾

Question

A junction is made between a metal of work function and a doped semiconductor of work function with . If the electric field at the interface has to be increased by a factor of 3, then the dopant concentration in the semiconductor would have to be – (December)

Choices

Choice (4)Response

a.

Decreased by a factor of 3

b.

Increased by a factor of 3

c.

Increased by a factor of 9

d.

Decreased by a factor of

Developed by: